Thermoreflectance studies of thin epitaxially deposited (InGa)P alloys
- 31 August 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (12), 1534-1539
- https://doi.org/10.1088/0022-3719/4/12/011
Abstract
Thermoreflectance measurements have been made on a series of (InGa)P epitaxial layers. The direct spin-orbit optical transitions are observed at all concentrations. The indirect transition is seen in the indirect gap material, which occurs about 65 mol.% GaP, through a process involving thermotransmission through the layer and a reflection at the substrate.Keywords
This publication has 6 references indexed in Scilit:
- The cathodoluminescence of Ga∞In1-∞P alloysSolid State Communications, 1971
- Applications of photoluminescence excitation spectroscopy to the study of indium gallium phosphide alloysJournal of Physics D: Applied Physics, 1970
- Pseudopotential calculations of the band structure of GaAs, InAs and (GaIn) as alloysSolid State Communications, 1969
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Thermoreflectance in SemiconductorsPhysical Review B, 1968
- Infra‐Red and Visible Photoluminescence in In1−xGaxPPhysica Status Solidi (b), 1968