Submilliamp 1.3 [micro sign]m vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2

Abstract

High performance 1.3 µm vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs/AlGaAs mirrors are demonstrated. A record low threshold current density of 454 A/cm2 and a threshold current of 0.83 mA have been achieved for pulsed operation at 20°C. The maximum CW and pulsed operating temperatures are 40 and 112°C, respectively.