Few-Layer MoS2: A Promising Layered Semiconductor

Abstract

Due to the recent expanding interest in two-dimensional layered materials, molybdenum disulfide (MoS₂) has been receiving much research attention. Having an ultrathin layered structure and an appreciable direct band gap of 1.9 eV in the monolayer regime, few-layer MoS₂ has good potential applications in nanoelectronics, optoelectronics, and flexible devices. In addition, the capability of controlling spin and valley degrees of freedom makes it a promising material for spintronic and valleytronic devices. In this review, we attempt to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS₂. Recent developments and advances in studying the material are highlighted.