Direct silicidation of Co on Si by rapid thermal annealing

1 March 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (3), 548-553
https://doi.org/10.1109/T-ED.1987.22962

Abstract

Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B-, As-, and P-implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, TEM, SIMS, and contact resistance measurements. The direct silicidation of Co on Si by rapid thermal annealing yields smooth low-resistivity films with minimal dopant redistribution.

Keywords

RAPID THERMAL ANNEALING
SI BY RAPID
CO ON SI
SILICIDATION OF CO

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