Heteroepitaxial growth of InN on Si(111) using a GaAs intermediate layer
- 28 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2), 149-154
- https://doi.org/10.1016/s0038-1101(96)00156-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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