Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxy

Abstract

We determined the conditions for successful lattice‐matched growth by liquid‐phase epitaxy near T=600 °C of Ga_xIn_1−xAs on 〈111B〉 InP substrates. We have used the results of the growth of both lattice‐matched and intentionally lattice‐mismatched epitaxial layers (0.4<xphase diagram which gives the correct liquidus temperature (T_L±1 °C) and the correct solid composition (±5% of the nominal composition) for the entire range of growth solutions considered for this important ternary semiconductor system. The parameters appropriate to this calculation are significantly different from those used to describe the growth of Ga_xIn_1−xAs on GaAs. The results of this calculation play an important part in the better understanding of the quaternary alloy Ga_xIn_1—xAs_yP_1−y.