Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide
- 21 December 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (18), 2545-2554
- https://doi.org/10.1088/0022-3727/10/18/020
Abstract
The presence of Ni in vapour-phase epitaxy (VPE) GaP has been detected through the strong photoluminescence band it induces in the infrared, centred near 2 mu m. The band remains intense up to Ga(d8). This luminescence is a persistent feature of undoped VPE GaP and may be present up to 30% of the strength observed in Ni-diffused material.Keywords
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