Analysis of high efficiency back point contact silicon solar cells
- 31 January 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (1), 65-79
- https://doi.org/10.1016/0038-1101(88)90087-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Improvements in silicon solar cell efficiencySolar Cells, 1986
- Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon NitrideJournal of the Electrochemical Society, 1984
- An investigation of recombination in gold-doped pin rectifiersSolid-State Electronics, 1983
- Silicon photovoltaic cellsSolid-State Electronics, 1981
- The temperature dependence of the Auger recombination coefficient of undoped siliconJournal of Physics C: Solid State Physics, 1979
- Spatial composition and injection dependence of recombination in silicon power device structuresIEEE Transactions on Electron Devices, 1979
- Improved performance thin solar cellsIEEE Transactions on Electron Devices, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Theory of a forward-biased diffused-junction P-L-N rectifier—Part I: Exact numerical solutionsIEEE Transactions on Electron Devices, 1972
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967