Noise Caused by GaAs MESFETs in Optical Receivers
- 8 July 1981
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 60 (6), 923-928
- https://doi.org/10.1002/j.1538-7305.1981.tb03389.x
Abstract
In the application of GaAs metal-semiconductor field effect transistors (MESFETS) in ultra low-noise lightwave receivers, the channel noise is often the dominant effect in determining sensitivity. This paper analyzes for the first time the excess cha...Keywords
This publication has 4 references indexed in Scilit:
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- Noise behavior of Schottky barrier gate field-effect transistors at microwave frequenciesIEEE Transactions on Electron Devices, 1971
- Gate noise in field effect transistors at moderately high frequenciesProceedings of the IEEE, 1963
- Thermal Noise in Field-Effect TransistorsProceedings of the IRE, 1962