Chemical bath deposition of Zn(O,S) and CdS buffers: Influence of Cu(In,Ga)Se2 grain orientation

Abstract
The present contribution discusses buffer growth by chemical bath deposition (CBD) on polycrystalline Cu(In,Ga)Se2 (CIGS) films deposited by in-line co-evaporation with an integral [Ga]/([Ga]+[In]) ratio of 0.3. We report a correlation of the coverage of CBD Zn(O,S) and CdS films with the CIGS grain orientation as determined by electron backscatter diffraction. 〈221〉-oriented CIGS grains are sparsely covered with the CBD films, whereas on 〈100〉/〈001〉- and 〈110〉/〈201〉-oriented CIGS grains, we found very dense coverage of the CIGS surfaces. This result may be explained by lower energies of CIGS {112} surfaces compared with those of {100}/{001} and {110}/{102}.

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