Initial stage of InAs on GaAs grown by molecular-beam epitaxy studied with low-energy ion scattering
- 30 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (27), 3577-3579
- https://doi.org/10.1063/1.105637
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Surface Structure of InAs (001) Treated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1991
- I n s i t u low-energy ion scattering analysis of InP surface during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Dislocation generation of GaAs on Si in the cooling stageApplied Physics Letters, 1990
- Modulation of internal piezoelectric fields in strained-layer superlattices grown along the [111] orientationJournal of Vacuum Science & Technology A, 1989
- Molecular beam epitaxial growth of high quality GaAs layer directly on GaP substrateJournal of Crystal Growth, 1989