Temperature Dependence of Laser Threshold Current Density and Emission Spectra in Electron‐Beam Pumped Gallium Arsenide Lasers
- 1 January 1968
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 29 (2), 715-723
- https://doi.org/10.1002/pssb.19680290221
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962