Parasitic impedance analysis of double bonding wires for high-frequency integrated circuit packaging
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 5 (9), 296-298
- https://doi.org/10.1109/75.410403
Abstract
Double bonding wires separated by an internal angle have been characterized in a wide range of frequencies using the Method of Moments with the incorporation of the ohmic resistance. For a 30° internal angle, the calculated total reactance is more than 35% less than that of a single bonding wire due to the negative mutual coupling effect of different current directions. The radiation effect at high frequencies has been observed decreasing the mutual inductance between the angled bonding wires, whereas for parallel bonding wires it greatly increases the mutual inductanceKeywords
This publication has 2 references indexed in Scilit:
- Wideband characterization of a typical bonding wire for microwave and millimeter-wave integrated circuitsIEEE Transactions on Microwave Theory and Techniques, 1995
- Wideband characterization of mutual coupling between high density bonding wiresIEEE Microwave and Guided Wave Letters, 1994