Experimental Verification of Scaling Relations for Electron-Hole Liquid Condensation

Abstract

Detailed experimental results for the phase diagrams, ground states, and critical points for electron-hole liquid condensation in unstressed Si and in Si stressed along the $〈111〉$, $〈110〉$, and $〈100〉$ directions are given and are shown to be in good agreement with microscopic calculations. These results for a set of systems with widely varying band structure provide, for the first time, a quantitative test for, and a verification of systematic scaling relations between the ground state and the critical properties for electron-hole liquid condensation.