Electrical properties of proton-bombarded Ga1−xAlxAs
- 15 November 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (10), 546-547
- https://doi.org/10.1063/1.1654743
Abstract
We have shown the feasibility of forming insulating walls in Ga1−xAlxAs by proton bombardment, and have demonstrated their stability up to a temperature of 180°C. The mean projected range of protons in Ga1−xAlxAs is determined for energies ranging from 200 to 1200 keV. The insulating properties of proton‐bombarded layers are applied to the realization of cross‐bar integrated arrays of electroluminescent diodes.Keywords
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