Selective bond-breaking and bond-making in oxynitride of Si and Ge: a case of chemical bond manipulation
- 8 October 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 387 (1-3), L1068-L1072
- https://doi.org/10.1016/s0039-6028(97)00477-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy studyApplied Physics Letters, 1997
- High resolution ion scattering study of silicon oxynitridationApplied Physics Letters, 1996
- Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETsIEEE Transactions on Electron Devices, 1996
- Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxidePhysical Review B, 1995
- Growth and surface chemistry of oxynitride gate dielectric using nitric oxideApplied Physics Letters, 1995
- An efficient method for cleaning Ge(100) surfaceSurface Science, 1994
- and NO interaction with Si(100)-(2×1) surfacesPhysical Review B, 1991
- Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STMScience, 1991
- Adsorption and dissociation of NO on germaniumVacuum, 1990
- Electronic structures of O and O crystalsPhysical Review B, 1981