Valence Band Parameters in Silicon from Cyclotron Resonances in Crystals Subjected to Uniaxial Stress
- 1 October 1960
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 5 (7), 307-309
- https://doi.org/10.1103/physrevlett.5.307
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.5.307Keywords
This publication has 6 references indexed in Scilit:
- Crystal Potential and Energy Bands of Semiconductors. III. Self-Consistent Calculations for SiliconPhysical Review B, 1960
- Deformation Potential in Germanium from Optical Absorption Lines for Exciton FormationPhysical Review Letters, 1959
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Observation of Quantum Effects in Cyclotron ResonancePhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955