High-power narrow-linewidth operation of GaAs diode lasers
- 1 July 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (1), 25-27
- https://doi.org/10.1063/1.1654723
Abstract
By utilizing a dispersive element in an external cavity, we find it possible for pulsed room‐temperature GaAs diodes to emit high output power (3 W) into a narrow linewidth (0.4 Å). This narrow‐band output is continuously tunable over an ∼ 100‐Å range with only a moderate variation in output power. Significantly, these qualities are preserved even at high output power densities (3 × 106 W/cm2).Keywords
This publication has 10 references indexed in Scilit:
- Tunable GaAs Laser in an External Dispersive CavityApplied Physics Letters, 1972
- Preparation and Properties of SiO Antireflection Coatings for GaAs Injection Lasers with External ResonatorsApplied Optics, 1971
- OPTICAL COUPLING OF ADJACENT STRIPE-GEOMETRY JUNCTION LASERSApplied Physics Letters, 1970
- Second-harmonic generation with the GaAs laserIEEE Journal of Quantum Electronics, 1970
- Diffraction-Limited GaAs Laser with External ResonatorApplied Optics, 1969
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Catastrophic Degradation in GaAs Injection LasersJournal of Applied Physics, 1967
- Operation of a gallium arsenide diode laser with an external resonator using a brewster windowPhysics Letters A, 1967
- HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERSApplied Physics Letters, 1967
- GaAs LASER LINEWIDTH MEASUREMENTS BY HETERODYNE DETECTIONApplied Physics Letters, 1964