Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration
- 28 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (9), 1135-1137
- https://doi.org/10.1063/1.110830
Abstract
We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.Keywords
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