UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
- 1 August 2002
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 192 (2), 296-300
- https://doi.org/10.1002/1521-396x(200208)192:2<296::aid-pssa296>3.0.co;2-z
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum WellsJapanese Journal of Applied Physics, 2001
- 230 to 250 nm Intense Emission from AlN/AlGaN Quantum Wellsphysica status solidi (a), 2000
- Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN SubstratesJapanese Journal of Applied Physics, 1999
- Role of Dislocation in InGaN Phase SeparationJapanese Journal of Applied Physics, 1998
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodesApplied Physics Letters, 1996
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986