Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- 1 October 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (10R)
- https://doi.org/10.1143/jjap.38.5735
Abstract
No abstract availableKeywords
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