Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates
- 21 May 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (21), 3271-3273
- https://doi.org/10.1063/1.1370535
Abstract
Ferromagnetic GaMnAs containing up to 10% Mn has been grown by migration-enhanced epitaxy at a substrate temperature of 150 °C. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.90 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition-dependent density of point defects.Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.3% is broken.Keywords
This publication has 21 references indexed in Scilit:
- Ferromagnetism in III–V and II–VI semiconductor structuresPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Structural properties of MBE grown GaMnAs layersThin Solid Films, 2000
- Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)AsJournal of Crystal Growth, 1999
- Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)Journal of Applied Physics, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Epitaxial growth and properties of III–V magnetic semiconductor (GaMn)As and its heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986