Electrical Properties of n-Type Gallium Arsenide at High Temperatures
- 1 March 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (3)
- https://doi.org/10.1143/jjap.10.392
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Electrical Properties of n- and p-Type Gallium ArsenideJournal of the Physics Society Japan, 1968
- TEMPERATURE DEPENDENCE OF THE MICROWAVE DIELECTRIC CONSTANT OF THE GaAs LATTICEApplied Physics Letters, 1968
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960