Absolute Conduction- and Valence-Band Positions for Ge from an Anisotropic Model of Photoemission
- 21 October 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (17), 1034-1037
- https://doi.org/10.1103/physrevlett.33.1034
Abstract
An anisotropic direct-transition model for single-crystal semiconductors is shown to predict the direct-transition features seen in experimental photoemission spectra for Ge(111) for eV. By comparing theory with experiment, all the conduction and valence bands at and within 1 Ry of the gap are determined. Comparison of experiment with current band models suggests that an ∼ 10% self-energy correction may be needed to describe high-energy optical transitions.
Keywords
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