Growth and interface characterization of GaAs/GaAlAs superlattices
Open Access
- 1 January 1987
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 22 (5), 273-278
- https://doi.org/10.1051/rphysap:01987002205027300
Abstract
The growth conditions of multi-quantum wells (MQWs) and superlattices (SLs) have been optimized and the characterization of the interface of high quality GaAs/GaAlAs and GaAs/AIAs superlattices has been performed. Electron microscopy, luminescence and X-ray diffraction show interfaces flat within one monolayer and only very large growth islandsKeywords
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