Electron trap annealing in neutron transmutation doped silicon
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9), 578-579
- https://doi.org/10.1063/1.89785
Abstract
Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n‐Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes.Keywords
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