Stability study of laser irradiation of silicon diffused with arsenic
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4), 273-275
- https://doi.org/10.1063/1.91450
Abstract
The stability of a metastable state produced by laser irradiation on arsenic‐diffused Si is studied by measurement of the sheet resistance as a function of postlaser heat treatment between 300 and 900 °C. The good conductivity produced by laser irradiation decays at as low as 400 °C within 1 h. This preempts the advantage of good conductivity produced by transient annealing and sets a severe restriction on the application of transient processing.Keywords
This publication has 3 references indexed in Scilit:
- Dual-wavelength laser annealingApplied Physics Letters, 1979
- The effect of free-carrier absorption on the annealing of ion-implanted silicon by pulsed lasersApplied Physics Letters, 1979
- Channeling study of the formation of arsenic clusters in siliconAIP Conference Proceedings, 1979