Concentration-dependent diffusion of B and P in Si
- 1 May 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (5), 2437-2439
- https://doi.org/10.1063/1.1662589
Abstract
At high impurity concentrations, the boron and phosphorus diffusion coefficient is concentration dependent. In the present work Thai's results are modified, extended, and discussed in detail. The total diffusion enhancement factor is calculated assuming proper semiconductor degeneracy for the case of B and P diffusion in Si, for the concentration range 1017−1022 atoms cm−3 and for various diffusion temperatures. Theoretical results are compared with the available experimental results.Keywords
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