The effects of heavy doping on I–V characteristics of GaAs JFET and MESFET devices
- 1 July 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (7), 683-686
- https://doi.org/10.1016/0038-1101(86)90152-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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