LCAO Calculations for the Boron and Nitrogen Interstitial in the Diamond Lattice
- 1 May 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 63 (1), 131-137
- https://doi.org/10.1002/pssb.2220630112
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Defect Creation in SemiconductorsPublished by Springer Nature ,1975
- Carbon Interstitial in the Diamond LatticePhysical Review B, 1973
- Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in DiamondPhysical Review B, 1973
- Photoconductivity in irradiated diamondJournal of Physics C: Solid State Physics, 1972
- A new mechanism for interstistitial migrationPhysics Letters A, 1972
- Calculation of the Physical Properties of Solids by the Extended Huckel Theory: A ReplyPhysical Review B, 1971
- The symmetry properties of the ND1 absorption centre in electron- irradiated diamondJournal of Physics C: Solid State Physics, 1970
- CHANNELING STUDY OF BORON-IMPLANTED SILICONApplied Physics Letters, 1970
- An Extended Hückel Theory. I. HydrocarbonsThe Journal of Chemical Physics, 1963
- Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond LatticePhysical Review B, 1962