Hole transport in polycrystalline pentacene transistors
- 4 March 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (9), 1658-1660
- https://doi.org/10.1063/1.1456549
Abstract
Measurements of pentacene thin-film transistors are used to explore hole transport mechanisms. The grain-boundary barrier model does not account for the data, since no field dependence of the mobility is observed over a wide range of gate and drain voltages. Instead, trapping provides a more satisfactory qualitative and quantitative interpretation. The subthreshold characteristics are attributed to deep acceptors in the pentacene film, and the conclusions are supported by numerical modeling.Keywords
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