Schottky barrier of nonuniform contacts to n-type and p-type silicon
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6), 4285-4288
- https://doi.org/10.1063/1.331257
Abstract
A current‐voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.Keywords
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