Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering
- 1 October 2005
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 283 (3-4), 404-408
- https://doi.org/10.1016/j.jcrysgro.2005.06.017
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitridePhysical Review B, 2002
- Phase composition and microstructure of polycrystalline and epitaxial TaNx layers grown on oxidized Si(001) and MgO(001) by reactive magnetron sputter depositionThin Solid Films, 2001
- Ultralarge scale integrated metallization and interconnectsJournal of Vacuum Science & Technology A, 1999
- Diffusion barrier property of TaN between Si and CuApplied Surface Science, 1996
- Properties of TaNx films as diffusion barriers in the thermally stable Cu/Si contact systemsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Magnetic, microstructural, and compositional characterization of Fe–N thin films for recording sensor applicationsJournal of Vacuum Science & Technology A, 1995
- Nanoindentation Hardness Tests Using a Point Contact MicroscopeJournal of Tribology, 1994
- Miniature hybrid microwave ICs using a novel thin-film technologyIEEE Transactions on Microwave Theory and Techniques, 1990
- New Type Thermal Printing Head Using Thin FilmIEEE Transactions on Parts, Hybrids, and Packaging, 1976
- Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum FilmsJournal of Applied Physics, 1964