Optical, Electronic, and Structural Properties of Uncoupled and Close-Packed Arrays of InP Quantum Dots
- 26 September 1998
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 102 (49), 9791-9796
- https://doi.org/10.1021/jp981703u
Abstract
No abstract availableKeywords
This publication has 48 references indexed in Scilit:
- SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrateApplied Physics Letters, 1997
- Dielectric Dispersion Measurements of CdSe Nanocrystal Colloids: Observation of a Permanent Dipole MomentPhysical Review Letters, 1997
- InP quantum dots: Electronic structure, surface effects, and the redshifted emissionPhysical Review B, 1997
- Three‐dimensional hexagonal close‐packed superlattice of passivated Ag nanocrystalsAdvanced Materials, 1997
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Synthesis of Size-Selected, Surface-Passivated InP NanocrystalsThe Journal of Physical Chemistry, 1996
- Spatially Confined Chemistry: Fabrication of Ge Quantum Dot ArraysThe Journal of Physical Chemistry, 1996
- Self-Organization of CdSe Nanocrystallites into Three-Dimensional Quantum Dot SuperlatticesScience, 1995
- Synthesis and Characterization of InP, GaP, and GaInP2 Quantum DotsThe Journal of Physical Chemistry, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994