Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adduct
- 1 August 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (8), 853-857
- https://doi.org/10.1007/bf02817497
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The growth and properties of In-doped metalorganic vapor phase epitaxy interdiffused multilayer process (HgCd)TeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Minority carrier lifetimes of metalorganic chemical vapor deposition long-wavelength infrared HgCdTe on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium tellurideJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Arsenic doping in metalorganic chemical vapor deposition Hg1−xCdxTe using tertiarybutylarsine and diethylarsineJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Indium doping of n-type HgCdTe layers grown by organometallic vapor phase epitaxyApplied Physics Letters, 1990
- The influence of crystallographic orientation on gallium incorporation in HgCdTe grown by metalorganic chemical vapor deposition on GaAsJournal of Vacuum Science & Technology A, 1990
- Standard relationships in the properties of Hg1−xCdxTeJournal of Vacuum Science & Technology A, 1989
- Extrinsic p-type doping of HgCdTe grown by organometallic epitaxyApplied Physics Letters, 1988
- Annealing and electrical properties of organometallic vapor phase epitaxy–interdiffused multilayer process grown HgCdTeJournal of Vacuum Science & Technology A, 1988
- Diffusion in CdxHg1-xTe and related materialsJournal of Crystal Growth, 1982