Remarks on the electronic structure of transition metal alloys

Abstract

The changes in electronic specific heat, residual resistivity and thermoelectric power caused by the introduction of different impurities into transition metals are calculated in the low impurity concentration limit by a localized perturbation method. The electronic structure of the pure transition metals is described by a tight-binding d band and an overlapping free-electron s band. It turns out that, in this model, simple relations connect the three quantities to the d-band structure and to the charge difference between host and impurity. The predictions of the model are shown to be frequently very different from those of the rigid band model.