New heteroisolation stripe-geometry visible-light-emitting lasers
- 1 July 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 11 (7), 421-426
- https://doi.org/10.1109/jqe.1975.1068673
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Red-light-emitting Alx Ga1−x As heterojunction laser diodesJournal of Applied Physics, 1973
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- An internally striped planar laser with 3-µm stripe width oscillating in transverse single modeProceedings of the IEEE, 1973
- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972
- Measurement and Interpretation of Long Spontaneous Lifetimes in Double Heterostructure LasersJournal of Applied Physics, 1972
- SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATUREApplied Physics Letters, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Efficiency of GaAs1 − xPx electroluminescent diodesSolid-State Electronics, 1967