OPTICAL ABSOPTION OF GaN
- 1 September 1970
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (5), 197-199
- https://doi.org/10.1063/1.1653363
Abstract
The absorption edge of GaN rises exponentially to a value of about 4 × 105 cm−1 at 3.5 eV (at 300 °K) suggesting direct optical transitions and a high joint density of states. Another absorption, which sets in beyond 1.3μ, increases with the 7th to 8th power of the wavelength.Keywords
This publication has 4 references indexed in Scilit:
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDSApplied Physics Letters, 1967
- Chapter 9 Effects of Free Carriers on the Optical PropertiesPublished by Elsevier ,1967
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965