Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (12), 590-592
- https://doi.org/10.1109/55.887475
Abstract
We describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as /spl sim/3 V, the output current variations can be less than 1 and 5% for high (/spl ges/0.5 μA) and low (/spl les/0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).Keywords
This publication has 6 references indexed in Scilit:
- Integration of organic LEDs and amorphous Si TFTs onto unbreakable metal foil substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displaysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Polysilicon VGA active matrix OLED displays-technology and performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer displayIEEE Transactions on Electron Devices, 1999
- An overview of organic electroluminescent materials and devicesJournal of the Society for Information Display, 1997
- Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrodeApplied Physics Letters, 1997