Radiation damage and the capture of Si interstitials by dopant atoms during implantation
- 1 March 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 13 (1-3), 490-494
- https://doi.org/10.1016/0168-583x(86)90553-7
Abstract
No abstract availableKeywords
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- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974