Influence of transmission resonance on carrier collection in a semiconductor quantum well
- 1 February 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (3), 962-964
- https://doi.org/10.1063/1.336572
Abstract
It is pointed out that carrier collection in a quantum well becomes very effective when the quantum well thickness satisfies a transmission resonance condition. This is attributable to the fact that an electron wave dwells on the quantum well for a long time under resonance condition.Keywords
This publication has 5 references indexed in Scilit:
- Negative resistance of semiconductor heterojunction diodes owing to transmission resonanceJournal of Applied Physics, 1985
- Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum WellJapanese Journal of Applied Physics, 1984
- Ballistic electron transport in semiconductorsIEEE Transactions on Electron Devices, 1981
- Polar mode scattering in ballistic transport GaAs devicesIEEE Electron Device Letters, 1980
- Carrier collection in a semiconductor quantum wellSolid State Communications, 1978