CNDO approach to amorphous silicon and to hydrogenated and fluorinated amorphous silicon
- 15 February 1983
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (4), 2435-2438
- https://doi.org/10.1103/physrevb.27.2435
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- APPLICATION OF THE MOLECULAR ORBITAL SELF-CONSISTENT-FIELD METHOD TO THE STUDY OF a-SiLe Journal de Physique Colloques, 1981
- Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compoundsJournal of Vacuum Science and Technology, 1980
- Theoretical models for the electronic structures of hydrogenated amorphous siliconPhysical Review B, 1980
- Study of surfaces and interfaces using quantum chemistry techniquesJournal of Vacuum Science and Technology, 1979
- Structural disorder and electronic properties of amorphous siliconPhysical Review B, 1977
- Electronic states of simple-transition-metal impurities in siliconPhysical Review B, 1977
- Photoelectron spectra and molecular properties. LI. Ionization potentials of silanes SinH2n+2Journal of the American Chemical Society, 1976
- Localized description of the electronic structure of covalent semiconductors. I. Perfect crystalsJournal of Physics C: Solid State Physics, 1975
- Second row molecular orbital calculations. Geometries, internal rotation barriers, and dipole moments of methylsilane, disilane, methyl mercaptan, and methylphosphineJournal of the American Chemical Society, 1974
- Electronic Properties of an Amorphous Solid. III. The Cohesive Energy and the Density of StatesPhysical Review B, 1973