Fast diffusion of elevated-temperature ion-implanted Se in GaAs as measured by secondary ion mass spectrometry
- 1 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3), 149-151
- https://doi.org/10.1063/1.89963
Abstract
Depth profiles of Se‐implanted GaAs samples have been measured as a function of substrate temperature during ion implanation using secondary ion mass spectrometry (SIMS). It has been found that Se diffuses anomalously fast during the implantation and that this diffusion is independent of implant time. Annealing of these implanted layers following the implantation, however, produces no additional diffusion even when annealed at 1000 °C for 15 min.Keywords
This publication has 4 references indexed in Scilit:
- A double-layered encapsulant for annealing ion-implanted GaAs up to 1100 °CApplied Physics Letters, 1977
- Evaluation of a cesium primary ion source on an ion microprobe mass spectrometerAnalytical Chemistry, 1977
- Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometryApplied Physics Letters, 1977
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium ArsenideJapanese Journal of Applied Physics, 1973