Negative resistance in a-SiCx:H double barrier devices — frequency dependence
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 762-764
- https://doi.org/10.1016/0022-3093(89)90713-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Optical observation of subbands in amorphous silicon ultrathin single layersApplied Physics Letters, 1988
- Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structuresApplied Physics Letters, 1988
- Evidence of quantum size effects in a-Si:H/a-SiCx:H superlattices. Observation of negative resistance in double barrier structuresJournal of Non-Crystalline Solids, 1987
- Resonant tunneling through amorphous silicon–silicon nitride double-barrier structuresPhysical Review Letters, 1987