Dislocation-related luminescence properties of silicon
- 1 January 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (1), 124-129
- https://doi.org/10.1088/0268-1242/13/1/019
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Hydrogen Passivation of the Dislocation-Related D-Band Luminescence in SiliconPhysica Status Solidi (a), 1993
- Photoluminescence and splitting of dislocations in germaniumPhysica Status Solidi (a), 1992
- Interaction of hydrogen and thermal donor defects in siliconApplied Physics Letters, 1987
- Dissociation-width-dependent radiative recombination of electrons and holes at widely split dislocations in siliconPhysical Review Letters, 1986
- Photoluminescence of Preannealed Plastically Deformed Silicon CrystalsPhysica Status Solidi (a), 1986
- Hydrogen Passivation of Oxygen Donors in SiMRS Proceedings, 1985
- Hydrogen Concentration and Distribution in High-Purity Germanium CrystalsIEEE Transactions on Nuclear Science, 1982
- Photoluminescence in plastically twisted siliconPhysica Status Solidi (a), 1981
- Modification of the dislocation luminescence spectrum by oxygen atmospheres in siliconPhysica Status Solidi (a), 1981
- The effect of thermal treatment on the electrical activity and mobility of dislocations in SiPhysica Status Solidi (a), 1980