Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures
- 1 February 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 91 (2), 521-530
- https://doi.org/10.1002/pssb.2220910217
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Recombination of Electrons at Ionized Donors in Silicon at Low TemperaturesPhysical Review Letters, 1973
- Impurity Ionization in-Type GermaniumPhysical Review B, 1972
- Hall effect of hot electrons in siliconJournal of Physics and Chemistry of Solids, 1972
- Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium TemperaturesPhysical Review B, 1966
- Electrical Conduction in-Type Germanium at Low TemperaturesPhysical Review B, 1962
- Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impuritiesJournal of Physics and Chemistry of Solids, 1961
- Ionisation par choc des impuretes dans le siliciumJournal of Physics and Chemistry of Solids, 1961
- Hot Electrons and Carrier Multiplication in Silicon at Low TemperaturePhysical Review Letters, 1959
- Possible Mechanism for Radiationless Recombination in SemiconductorsPhysical Review B, 1957
- Optical and Impact Recombination in Impurity Photoconductivity in Germanium and SiliconPhysical Review B, 1955