A study by elastically reflected electrons of InP(100) substrates previously ion bombarded

Abstract

The current I_e of elastically reflected electrons on (100) InP substrates was determined by measuring the spectral distribution and the current transmitted by the optical system. A method allowing one to calculate the current of electrons I_e, elastically reflected by a stacking of alternating A and B monolayers ended by a mixed monolayer, is developed. The method is applied to clean and stable InP(100) surfaces previously studied by Auger electron spectroscopy. The correlation between the results obtained by these two techniques performed on samples chemically cleaned both bombarded with Ar⁺ ions at low energy and room temperature, allows one to consider the stacking model (0.75 In+0.25 P)/P/In/P as the most reliable.