Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Top Cited Papers
- 15 November 2007
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 19 (22), 3919-3923
- https://doi.org/10.1002/adma.200700251
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile MemoriesAdvanced Materials, 2006
- Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealingThin Solid Films, 2005
- Memory technology for the post CMOS eraIEEE Circuits and Devices Magazine, 2005
- Pulling the plug on the current drain [threshold switching]IEEE Circuits and Devices Magazine, 2004
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- XPS depth profile analysis of non‐stoichiometric NiO filmsSurface and Interface Analysis, 2004
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000
- Switching Phenomena in Amorphous Chalcogenide Thin FilmsJapanese Journal of Applied Physics, 1977
- Electroforming and dielectric breakdown in thin aluminium oxide filmsThin Solid Films, 1973
- On the Mechanism of Threshold Switching in Titanium OxideJapanese Journal of Applied Physics, 1973