HIGH-FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS
- 15 May 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (10), 380-382
- https://doi.org/10.1063/1.1653033
Abstract
The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact‐semiconductor interface.Keywords
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