Can velocity overshoot or ballistic transport be efficient in submicron devices?
- 1 November 1982
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 13 (6), 18-22
- https://doi.org/10.1016/s0026-2692(82)80133-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A proposal and numerical simulation of N+N N+ Schottky device for ballistic and quasiballistic electron spectroscopyApplied Physics Letters, 1982
- The role of transport in very small devices for VLSIMicroelectronics Journal, 1981
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977